Flexible display device and method of manufacturing the same

ABSTRACT

A flexible display device includes a substrate, a light emitting layer, a first insulating layer, and a conductive layer. The substrate includes a bent region and a non-bent region. The light emitting layer overlaps the non-bent region. The first insulating layer is disposed on the substrate. The conductive layer is disposed on the first insulating layer. A sidewall of the first insulating layer includes a first tapered surface. The first tapered surface includes at least three curved surface portions continuously arranged with one another.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a Divisional of U.S. patent application Ser. No.15/603,362, filed May 23, 2017, and claims priority from and the benefitof Korean Patent Application No. 10-2016-0129098, filed Oct. 6, 2016,each of which is hereby incorporated by reference for all purposes as iffully set forth herein.

BACKGROUND Field

One or more exemplary embodiments relate to a flexible display deviceand a method of manufacturing the same.

Discussion

Demand for portable display devices and interest in flexible displaydevices that may be bent, folded, or otherwise deformed via externalforces of a user are increasing. A flexible display device may include aflexible substrate, a thin film transistor (TFT), and a light emittingunit. When an inorganic material is arranged in a bent region of theflexible display device, stress caused by bending the flexible displaydevice may, in turn, cause the inorganic material to be transformed(e.g., volumetrically deformed) and damaged. When a step difference isprovided in the bent region and a metal material is arranged on the stepdifference, the metal material may be cut off, cracked, or otherwisedamaged due to the step difference.

The above information disclosed in this section is only for enhancementof an understanding of the background of the inventive concepts, and,therefore, it may contain information that does not form prior artalready known to a person of ordinary skill in the art.

SUMMARY

One or more exemplary embodiments provide a flexible display deviceincluding a metal wiring line on a curved surface to prevent (or atleast reduce) the potential of the metal wiring line from being shorted.

One or more exemplary embodiments provide a flexible display device inwhich inorganic material arranged in a bending region is removed vialaser radiation to reduce the number of masks used to manufacture theflexible display device.

One or more exemplary embodiments provide a method of manufacturing aflexible display device including a metal wiring line on a curvedsurface to prevent (or at least reduce) the potential of the metalwiring line from being shorted.

One or more exemplary embodiments provide a method of manufacturing aflexible display device in which inorganic material arranged in abending region is removed via laser radiation to reduce the number ofmasks used to manufacture the flexible display device.

Additional aspects will be set forth in the detailed description whichfollows, and, in part, will be apparent from the disclosure, or may belearned by practice of the inventive concepts.

According to one or more exemplary embodiments, a flexible displaydevice includes a substrate, a light emitting layer, a first insulatinglayer, and a conductive layer. The substrate includes a bent region anda non-bent region. The light emitting layer overlaps the non-bentregion. The first insulating layer is disposed on the substrate. Theconductive layer is disposed on the first insulating layer. A sidewallof the first insulating layer includes a first tapered surface. Thefirst tapered surface includes at least three curved surface portionscontinuously arranged with one another.

According to one or more exemplary embodiments, a method ofmanufacturing a flexible display device includes forming a firstinsulating layer on a surface of a substrate, the substrate including abending region and a non-bending region; removing, via laser radiation,a portion of the first insulating layer, the portion of the firstinsulating layer overlapping the bending region; forming a conductivelayer on the first insulating layer; and forming a light emitting layeroverlapping the non-bending region.

According to one or more exemplary embodiments, since the metal materialof a conductive layer is arranged on a curved surface, it is possible toprovide a flexible display device in which the metal material of theconductive layer is not cut off, as well as possible to provide a methodof manufacturing the same. In addition, according to one or moreexemplary embodiments, since an inorganic material arranged in the bentregion is removed by radiating a laser onto the inorganic material, itis possible to provide a method of manufacturing a flexible displaydevice in which the number of masks used to manufacture the flexibledisplay device is reduced, as may be manufacturing time and costs.

The foregoing general description and the following detailed descriptionare exemplary and explanatory and are intended to provide furtherexplanation of the claimed subject matter.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the inventive concept, and are incorporated in andconstitute a part of this specification, illustrate exemplaryembodiments of the inventive concept, and, together with thedescription, serve to explain principles of the inventive concept.

FIG. 1 is a view of a flexible display device, according to one or moreexemplary embodiments.

FIG. 2 is a cross-sectional view of the flexible display device of FIG.1 in a bent state, according to one or more exemplary embodiments.

FIGS. 3A, 3B, 3C, and 3D are cross-sectional views of the flexibledisplay device of FIG. 1 taken along sectional line I-I′, according toone or more exemplary embodiments.

FIG. 4 is a cross-sectional view of a portion of a pixel of the flexibledisplay device of FIG. 1 taken along sectional line II-II′, according toone or more exemplary embodiments.

FIGS. 5A and 5B are cross-sectional views of a flexible display deviceat various stages of being laser ablated, according to one or moreexemplary embodiments.

FIGS. 6A, 6B, 6C, 6D, 6E, 6F, 6G, 6H, 6I, 6J, and 6K are cross-sectionalviews of a flexible display device at various stages of manufacture,according to one or more exemplary embodiments.

FIGS. 7A and 7B are cross-sectional views of a flexible display deviceat various stages of manufacture, according to one or more exemplaryembodiments.

FIGS. 8A, 8B, and 8C are cross-sectional views of a flexible displaydevice at various stages of being manufactured, according to one or moreexemplary embodiments.

FIGS. 9A, 9B, and 9C are cross-sectional views of a flexible displaydevice at various stages of manufacture, according to one or moreexemplary embodiments.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments. It is apparent, however,that various exemplary embodiments may be practiced without thesespecific details or with one or more equivalent arrangements. In otherinstances, well-known structures and devices are shown in block diagramform in order to avoid unnecessarily obscuring various exemplaryembodiments.

Unless otherwise specified, the illustrated exemplary embodiments are tobe understood as providing exemplary features of varying detail ofvarious exemplary embodiments. Therefore, unless otherwise specified,the features, components, modules, layers, films, panels, regions,aspects, etc. (hereinafter collectively referred to as “elements”), ofthe various illustrations may be otherwise combined, separated,interchanged, and/or rearranged without departing from the disclosedexemplary embodiments. Further, in the accompanying figures, the sizeand relative sizes of elements may be exaggerated for clarity and/ordescriptive purposes. When an exemplary embodiment may be implementeddifferently, a specific process order may be performed differently fromthe described order. For example, two consecutively described processesmay be performed substantially at the same time or performed in an orderopposite to the described order. Also, like reference numerals denotelike elements.

When an element is referred to as being “on,” “connected to,” or“coupled to” another element, it may be directly on, connected to, orcoupled to the other element or intervening elements may be present.When, however, an element is referred to as being “directly on,”“directly connected to,” or “directly coupled to” another element, thereare no intervening elements present. Further, the D1-axis, the D2-axis,and the D3-axis are not limited to three axes of a rectangularcoordinate system, and may be interpreted in a broader sense. Forexample, the D1-axis, the D2-axis, and the D3-axis may be perpendicularto one another, or may represent different directions that are notperpendicular to one another. For the purposes of this disclosure, “atleast one of X, Y, and Z” and “at least one selected from the groupconsisting of X, Y, and Z” may be construed as X only, Y only, Z only,or any combination of two or more of X, Y, and Z, such as, for instance,XYZ, XYY, YZ, and ZZ. As used herein, the term “and/or” includes any andall combinations of one or more of the associated listed items.

Although the terms “first,” “second,” etc. may be used herein todescribe various elements, these elements should not be limited by theseterms. These terms are used to distinguish one element from anotherelement. Thus, a first element discussed below could be termed a secondelement without departing from the teachings of the present disclosure.

Spatially relative terms, such as “beneath,” “below,” “under,” “lower,”“above,” “upper,” “over,” and the like, may be used herein fordescriptive purposes, and, thereby, to describe one element'srelationship to another element(s) as illustrated in the drawings.Spatially relative terms are intended to encompass differentorientations of an apparatus in use, operation, and/or manufacture inaddition to the orientation depicted in the drawings. For example, ifthe apparatus in the drawings is turned over, elements described as“below” or “beneath” other elements or features would then be oriented“above” the other elements or features. Thus, the exemplary term “below”can encompass both an orientation of above and below. Furthermore, theapparatus may be otherwise oriented (e.g., rotated 90 degrees or atother orientations), and, as such, the spatially relative descriptorsused herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof. It is also noted that, as used herein, the terms“substantially,” “about,” and other similar terms, are used as terms ofapproximation and not as terms of degree, and, as such, are utilized toaccount for inherent deviations in measured, calculated, and/or providedvalues that would be recognized by one of ordinary skill in the art.

Various exemplary embodiments are described herein with reference tosectional illustrations that are schematic illustrations of idealizedexemplary embodiments and/or intermediate structures. As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should not beconstrued as limited to the particular illustrated shapes of regions,but are to include deviations in shapes that result from, for instance,manufacturing. In this manner, regions illustrated in the drawings areschematic in nature and shapes of these regions may not illustrate theactual shapes of regions of a device, and, as such, are not intended tobe limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

FIG. 1 is a view of a flexible display device, according to one or moreexemplary embodiments. FIG. 2 is a cross-sectional view of the flexibledisplay device of FIG. 1 in a bent state, according to one or moreexemplary embodiments.

Referring to FIGS. 1 and 2, the flexible display device has a substrateSUB including a first non-bent region FA1, a bent region BA, and asecond non-bent region FA2. The first non-bent region FA1 and the secondnon-bent region FA2 may be manufactured in various shapes to implementvarious functions. For example, a light emitting unit (or structure) DISthat displays an image and a thin film transistor layer TFT that drivesthe light emitting unit DIS may be arranged in (e.g., overlap) the firstnon-bent region FA1. Although illustrated as single layers, the lightemitting unit DIS and the thin film transistor layer TFT may include aplurality of layers, as will become more apparent below. A circuitpattern SD that applies a signal for driving at least one of the thinfilm transistor layer TFT and the light emitting unit DIS may bearranged in (e.g., overlap) the second non-bent region FA2. A conductivelayer CL may be arranged in (e.g., overlap) the bent region BA. Theconductive layer CL may be used as a wiring (or signal) line thattransmits the signal from the circuit pattern SD to at least one of thethin film transistor layer TFT and the light emitting unit DIS.

FIGS. 3A, 3B, 3C, and 3D are cross-sectional views of the flexibledisplay device of FIG. 1 taken along sectional line I-I′, according toone or more exemplary embodiments.

Referring to FIG. 3A, in at least one of the first non-bent region FA1and the second non-bent region FA2, a barrier layer BR, a gateinsulating layer GI, a first interlayer insulating layer ILD1, a secondinterlayer insulating layer ILD2, and the conductive layer CL aresequentially arranged on the substrate SUB. It is also contemplated thatone or more portions of at least one of the barrier layer BR, the gateinsulating layer GI, the first interlayer insulating layer ILD1, thesecond interlayer insulating layer ILD2, and the conductive layer CL mayoverlap the bent region BA, such as one or more portions of the barrierlayer BR.

The substrate SUB may be formed of a flexible material to be bent,folded, or otherwise deformed. The substrate SUB may have a single layerstructure or a multilayer structure. For example, the substrate SUB mayinclude at least one of polystyrene, polyvinyl alcohol, polymethylmethacrylate, polyethersulfone, polyacrylate, polyetherimide,polyethylene naphthalate, polyethylene terephthalate, polyphenylenesulfide, polyarylate, polyimide, polycarbonate, triacetate cellulose,and cellulose acetate propionate. The material of which the substrateSUB is formed may vary and may include fiber glass reinforced plastic.

The barrier layer BR increases smoothness of a surface (e.g., topsurface) of the substrate SUB and/or prevents impurities from thesubstrate SUB from permeating into the gate insulating layer GI, thefirst interlayer insulating layer ILD1, the second interlayer insulatinglayer ILD2, and the conductive layer CL. The barrier layer BR may have atapered sidewall provided with continuously arranged curved surfacesCS1, CS2, and CS3. According to one or more exemplary embodiments, thenumber of curved surfaces provided on the sidewall of the barrier layerBR may be larger than three.

The barrier layer BR may have a multilayer structure. Among the multiplelayers, a layer that contacts the substrate SUB may include at least oneof silicon nitride, silicon oxide, and silicon oxynitride, and mayincrease the smoothness of the substrate SUB. Among the multiple layers,layers that do not contact the substrate SUB may include at least one ofsilicon nitride, silicon oxide, and silicon oxynitride, and may preventthe impurities from the substrate SUB from permeating into the gateinsulating layer GI, the first interlayer insulating layer ILD1, thesecond interlayer insulating layer ILD2, and the conductive layer CL.

The gate insulating layer GI may include at least one of the materialsdescribed to be included in the barrier layer BR. The gate insulatinglayer GI may have a tapered sidewall provided with continuously arrangedcurved surfaces CS4, CS5, and CS6. According to one or more exemplaryembodiments, the number of curved surfaces provided on the sidewall ofthe gate insulating layer GI may be larger than three.

The first interlayer insulating layer ILD1 may include at least one ofthe materials described to be included in the barrier layer BR. Thefirst interlayer insulating layer ILD1 may have a tapered sidewallprovided with continuously arranged curved surfaces CS7, CS8, and CS9.According to one or more exemplary embodiments, the number of curvedsurfaces provided on the sidewall of the first interlayer insulatinglayer ILD1 may be larger than three.

The second interlayer insulating layer ILD2 may include at least one ofthe materials described to be included in the barrier layer BR. Thesecond interlayer insulating layer ILD2 may have a tapered sidewallprovided with continuously arranged curved surfaces CS10, CS11, andCS12. According to one or more exemplary embodiments, the number ofcurved surfaces provided on the sidewall of the second interlayerinsulating layer ILD2 may be larger than three.

The conductive layer CL is arranged on the second interlayer insulatinglayer ILD2 and may include metal, for example, at least one of aluminum(Al), titanium (Ti), gold (Au), silver (Ag), copper (Cu), nickel (Ni),platinum (Pt), and molybdenum (Mo). According to one or more exemplaryembodiments, the conductive layer CL may have a multilayer structure.For example, the conductive layer CL may have a three-layer structure ofTi/Al/Ti.

An opening OPN is formed in each of the barrier layer BR, the gateinsulating layer GI, the first interlayer insulating layer ILD1, and thesecond interlayer insulating layer ILD2 in a region overlapping the bentregion BA. Since the opening OPN separates opposing portions of thebarrier layer BR, the gate insulating layer GI, the first interlayerinsulating layer ILD1, and the second interlayer insulating layer ILD2in a region overlapping the bent region BA, although the bent region BAis bent, stress is not applied to (or may be reduced in) the barrierlayer BR, the gate insulating layer GI, the first interlayer insulatinglayer ILD1, and the second interlayer insulating layer ILD2. Inaddition, since the conductive layer CL is arranged on a tapered surfaceprovided with a flat part or the curved surfaces CS1 through CS12,although the bent region BA is bent, the conductive layer CL is not cutoff, cracked, or otherwise damaged. To this end, the tapered surfaceprovided with a flat part and/or curved surfaces CS1 through CS12 mayincrease surface area in which the conductive layer CL contacts at leastone of the barrier layer BR, the gate insulating layer GI, the firstinterlayer insulating layer ILD1, and the second interlayer insulatinglayer ILD2. This increase in contacting surface area may also prevent(or at least reduce) the potential for the conductive layer CL fromlifting off of (e.g., delaminating from) the barrier layer BR, the gateinsulating layer GI, the first interlayer insulating layer ILD1, and thesecond interlayer insulating layer ILD2.

According to one or more exemplary embodiments, the barrier layer BR,the gate insulating layer GI, the first interlayer insulating layerILD1, and the second interlayer insulating layer ILD2 may respectivelybe a first insulating layer, a second insulating layer, a thirdinsulating layer, and a fourth insulating layer.

Referring to FIG. 3B, in at least one of the first non-bent region FA1and the second non-bent region FA2, the barrier layer BR, a gateinsulating layer GI′, a first interlayer insulating layer ILD1′, asecond interlayer insulating layer ILD2′, and the conductive layer CLare sequentially arranged on the substrate SUB. It is also contemplatedthat one or more portions of at least one of the barrier layer BR, thegate insulating layer GI′, the first interlayer insulating layer ILD1′,the second interlayer insulating layer ILD2′, and the conductive layerCL′ may overlap the bent region BA, such as one or more portions of thebarrier layer BR. For convenience, description of the same (or similar)elements as those described with reference to FIG. 3A will be omitted toavoid obscuring exemplary embodiments.

Unlike the gate insulating layer GI illustrated in FIG. 3A, the gateinsulating layer GI′ has a tapered sidewall without curved surfaces.Unlike the first interlayer insulating layer ILD1 illustrated in FIG.3A, the first interlayer insulating layer ILD1′ has a tapered sidewallwithout curved surfaces. Unlike the second interlayer insulating layerILD2 illustrated in FIG. 3A, the second interlayer insulating layerILD2′ has a tapered sidewall without curved surfaces.

As seen in FIG. 3B, a step difference (e.g., a lateral spacing) isprovided between the gate insulating layer GI′ and the first interlayerinsulating layer ILD1′, which is only an exemplary embodiment. Accordingto one or more exemplary embodiments, step difference may be providedbetween the first interlayer insulating layer ILD1′ and the secondinterlayer insulating layer ILD2′ or in at least one of (or between atleast two of) the gate insulating layer GI′, the first interlayerinsulating layer ILD1′, and the second interlayer insulating layerILD2′.

Since the barrier layer BR, the gate insulating layer GI′, the firstinterlayer insulating layer ILD1′, and the second interlayer insulatinglayer ILD2′ have opposing portions that are separated from each otherdue to the opening OPN provided in the bent region BA, although the bentregion BA is bent, stress is not applied to (or may be reduced in) thebarrier layer BR, the gate insulating layer GI′, the first interlayerinsulating layer ILD1′, and the second interlayer insulating layerILD2′. In addition, since the conductive layer CL′ is arranged on thetapered surface provided with a flat part or curved surfaces CS1 throughCS3, although the bent region BA is bent, the conductive layer CL is notcut off. To this end, the tapered surface provided with a flat partand/or curved surfaces CS1 through CS3 may increase surface area inwhich the conductive layer CL′ contacts at least one of the barrierlayer BR, the gate insulating layer GI′, the first interlayer insulatinglayer ILD1′, and the second interlayer insulating layer ILD2′. Thisincrease in contacting surface area may also prevent (or at leastreduce) the potential for the conductive layer CL′ from lifting off of(e.g., delaminating from) the barrier layer BR, the gate insulatinglayer GI′, the first interlayer insulating layer ILD1′, and the secondinterlayer insulating layer ILD2′.

Referring to FIG. 3C, in at least one of the first non-bent region FA1and the second non-bent region FA2, a barrier layer BR′, a gateinsulating layer GI″, a first interlayer insulating layer ILD1″, asecond interlayer insulating layer ILD2″, an organic layer OL, and theconductive layer CL are sequentially arranged on the substrate SUB. Itis also contemplated that one or more portions of at least one of thebarrier layer BR′, the gate insulating layer GI″, the first interlayerinsulating layer ILD1″, the second interlayer insulating layer ILD2″,the organic layer OL, and the conductive layer CL″ may overlap the bentregion BA, such as one or more portions of the organic layer OL. Forconvenience, description of the same (or similar) elements as thosedescribed with reference to FIGS. 3A and 3B will be omitted to avoidobscuring exemplary embodiments.

Unlike the barrier layer BR illustrated in FIG. 3A, the barrier layerBR′ may have a tapered sidewall provided with a curved surface.According to one or more exemplary embodiments, the barrier layer BR′may have a tapered sidewall without a curved surface or may have adifferently shaped sidewall. Unlike the gate insulating layer GIillustrated in FIG. 3A, a sidewall of the gate insulating layer GI″ maynot be provided with curved surfaces, nor may it be tapered. A sidewallof the first interlayer insulating layer ILD1″ may not be provided withcurved surfaces, nor may it be tapered. A sidewall of the secondinterlayer insulating layer ILD2″ may not be provided with curvedsurfaces, nor may it be tapered.

The organic layer OL may be arranged to fill (or at least partiallyfill) the opening OPN. Due to the opening OPN, the sidewalls and stepdifferences of the barrier layer BR′, the gate insulating layer GI″, thefirst interlayer insulating layer ILD1″, and the second interlayerinsulating layer ILD2″ are not exposed to the outside. An exposed partof the organic layer OL may be tapered. To this end, a surface (e.g., anupper surface) of the organic layer OL opposing a surface (e.g., uppersurface) of the substrate SUB may be curved. For instance, the surfaceof the organic layer OL may arcuately protrude away from the surface ofthe substrate SUB. The conductive layer CL″ is arranged on the organiclayer OL.

Since the barrier layer BR′, the gate insulating layer GI″, the firstinterlayer insulating layer ILD1″, and the second interlayer insulatinglayer ILD2″ have opposing portions that are separated from each otherdue to the opening OPN provided in the bent region BA, although the bentregion BA is bent, stress is not applied to (or may be reduced in) thebarrier layer BR′, the gate insulating layer GI″, the first interlayerinsulating layer ILD1″, and the second interlayer insulating layerILD2″. In addition, since the conductive layer CL″ is arranged on a flatpart of the second interlayer insulating layer ILD2″ or the exposedtapered surface of the organic layer OL, although the bent region BA isbent, the conductive layer CL″ is not cut off. To this end, the taperedsurface of the organic layer OL may increase surface area in which theconductive layer CL″ contacts the organic layer OL in the bent regionBA. This increase in contacting surface area may also prevent (or atleast reduce) the potential for the conductive layer CL″ from liftingoff of (e.g., delaminating from) the organic layer OL.

Referring to FIG. 3D, in at least one of the first non-bent region FA1and the second non-bent region FA2, a barrier layer BR″, the gateinsulating layer GI′, the first interlayer insulating layer ILD1′, thesecond interlayer insulating layer ILD2′, an organic layer OL′, and theconductive layer CL′″ are sequentially arranged on the substrate SUB. Itis also contemplated that one or more portions of at least one of thebarrier layer BR″, the gate insulating layer GI′, the first interlayerinsulating layer ILD1′, the second interlayer insulating layer ILD2′,the organic layer OL′, and the conductive layer CL′″ may overlap thebent region BA, such as one or more portions of the barrier layer BR″and the organic layer OL′. For convenience, description of the same (orsimilar) elements as those described with reference to FIGS. 3A to 3Cwill be omitted to avoid obscuring exemplary embodiments.

The barrier layer BR″ has an island ISL overlapping the bent region BA.The island ISL does not contact a part excluding the island ISL of thebarrier layer BR″. According to one or more exemplary embodiments, oneor more surfaces (e.g., sidewall surfaces) of the island ISL may betapered.

The organic layer OL′ has a concavo-convex part PD. A shape of theconcavo-convex part PD corresponds to that of the island ISL. A part ofthe organic layer OL′ is tapered and a remaining part of the organiclayer OL′ is flat. For example, when the island ISL is tapered, a shapeof the concavo-convex part PD may be tapered.

Since the barrier layer BR″, the gate insulating layer GI′, the firstinterlayer insulating layer ILD1′, and the second interlayer insulatinglayer ILD2′ have opposing portions that are separated from each otherdue to the opening OPN′ provided in the bent region BA, although thebent region BA is bent, stress is not applied to (or may be reduced in)the barrier layer BR″, the gate insulating layer GI′, the firstinterlayer insulating layer ILD1′, and the second interlayer insulatinglayer ILD2′. In addition, since the conductive layer CL′″ is arranged ona flat part of the second interlayer insulating layer ILD2′ or the flatpart and the tapered surface of the organic layer OL′, although the bentregion BA is bent, the conductive layer CL′″ is not cut off.

In addition, since the conductive layer CL′″ is arranged on theconcavo-convex part PD of the organic layer OL′, a part of theconductive layer CL′″ may also be concavo-convex. When the conductivelayer CL′″ is concavo-convex, stress applied to the conductive layerCL′″ due to the bending of the bent region BA may be reduced. To thisend, the tapered surface of the organic layer OL′ may increase surfacearea in which the conductive layer CL′″ contacts the organic layer OL′in the bent region BA. This increase in contacting surface area may alsoprevent (or at least reduce) the potential for the conductive layer CL′″from lifting off of (e.g., delaminating from) the organic layer OL′.

FIG. 4 is a cross-sectional view of a portion of a pixel of the flexibledisplay device of FIG. 1 taken along sectional line II-II′, according toone or more exemplary embodiments. In the first non-bent region FA1, thethin film transistor layer TFT and the light emitting unit DIS aresequentially arranged on the substrate SUB.

The thin film transistor layer TFT includes a barrier layer BR, anactive pattern ACT, a gate insulating layer GI, a gate electrode GE, afirst capacitor electrode CE1, a first interlayer insulating layer ILD1,a second capacitor electrode CE2, a second interlayer insulating layerILD2, a source electrode SE, a drain electrode DE, and a passivationlayer PSL. For convenience, only elements not described in associationwith at least one of FIGS. 3A through 3D will be described inassociation with FIG. 4. In other words, since the barrier layer BR, thegate insulating layer GI, the first interlayer insulating layer ILD1,and the second interlayer insulating layer ILD2 were described inassociation with at least one of FIGS. 3A through 3D, duplicativedescriptions will be omitted to avoid obscuring exemplary embodiments.

The active pattern ACT is arranged between the barrier layer BR and thegate insulating layer GI. Although not illustrated, the active patternACT may include a channel region provided in a source region or a drainregion or between the source region and the drain region. The activeregion ACT includes a semiconductor material and may include at leastone of polysilicon, amorphous silicon, and a semiconductor oxide. It iscontemplated, however, that any other suitable material may be utilizedin association with exemplary embodiments. The channel region as asemiconductor pattern that is not doped with impurities and may be anintrinsic semiconductor. The source region and the drain region may besemiconductor patterns doped with impurities. The impurities may be atleast one of n-type impurities, p-type impurities, and other metals.

The gate electrode GE and the first capacitor electrode CE1 are arrangedbetween the gate insulating layer GI and the first interlayer insulatinglayer ILD1. That is, the gate electrode GE and the first capacitorelectrode CE1 are arranged on the same plane or disposed at the samelayer as one another. The gate electrode GE may be arranged to overlapthe channel region of the active pattern ACT. The gate electrode GE andthe first capacitor electrode CE1 may include a metal, for example, atleast one of Al, Ti, Au, Ag, Co, Ni, Pt, and Mo. According to one ormore exemplary embodiments, the gate electrode GE and the firstcapacitor electrode CE1 may have a single layer structure or amultilayer structure. For instance, the gate electrode GE and the firstcapacitor electrode CE1 may have a multilayer structure of Ti/Al/Ti.

The second capacitor electrode CE2 is arranged between the firstinterlayer insulating layer ILD1 and the second interlayer insulatinglayer ILD2. The second capacitor electrode CE2 may include one of thematerials described to be included in the first capacitor electrode CE1and may have a single layer structure or a multilayer structure. Thefirst capacitor electrode CE1 and the second capacitor electrode CE2 mayform a capacitor with the first interlayer insulating layer ILD1disposed between the first capacitor electrode CE1 and the secondcapacitor electrode CE2.

The source electrode SE and the drain electrode DE are arranged on thesecond interlayer insulating layer ILD2. The source electrode SE may bearranged to overlap the source region of the active pattern ACT. Thedrain electrode DE may be arranged to overlap the drain region of theactive pattern ACT. The source electrode SE and the drain electrode DEcontact the active pattern ACT through contact holes formed in the gateinsulating layer GI, the first interlayer insulating layer ILD1, and thesecond interlayer insulating layer ILD2. In one or more exemplaryembodiments, the source electrode SE and the drain electrode DE may bearranged on the same plane (or disposed at the same layer) as theconductive layer CL illustrated in FIG. 3A, a configuration that will bedescribed in detail with reference to FIGS. 6I and 6J.

The passivation layer PSL may be arranged on the source electrode SE andthe drain electrode DE. The passivation layer PSL may include aninorganic material and may further include an organic material accordingto one or more exemplary embodiments. The inorganic material may includeat least one of silicon nitride, silicon oxide, and silicon oxynitride.The organic material may include photoacryl.

The light emitting unit DIS includes a first electrode ADE, a pixeldefining layer PDL, a emission layer EL, and a second electrode CTE.

The first electrode ADE is arranged on the passivation layer PSL andcontacts the drain electrode DE through a contact hole in thepassivation layer PSL. The first electrode ADE may include a metal and aconductive oxide. For instance, the metal may include at least one ofAg, magnesium (Mg), Al, Pt, palladium (Pd), Au, Ni, neodymium (Nd),iridium (Ir), and chromium (Cr). The conductive oxide may include atleast one of aluminum zinc oxide (AZO), gallium zinc oxide (GZO), indiumtin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and indiumtin zinc oxide (ITZO).

The pixel defining layer PDL is arranged on the passivation layer PSLand the first electrode ADE, and exposes at least a portion of the firstelectrode ADE.

The emission layer EL is arranged on a portion of the first electrodeADE that is exposed by the pixel defining layer PDL. The emission layerEL may include a low molecular organic material or a high molecularorganic material, and may have a single layer structure or a multilayerstructure. For example, the emission layer EL may include a holeinjection layer HIL, a hole transport layer HTL, an emission layer EML,an electron transport layer ETL, and an electron injection layer EIL.

The second electrode CTE is arranged on the pixel defining layer PDL andthe emission layer EL. The second electrode CTE may include at least oneof the materials described to be included in the first electrode ADE.The second electrode CTE may have a single layer structure or amultilayer structure.

FIGS. 5A and 5B are cross-sectional views of a flexible display deviceat various stages of being laser ablated, according to one or moreexemplary embodiments.

For instance, FIG. 5A illustrates a laser emitter LE radiating a laseronto an inorganic layer IL that is disposed on substrate SUB′. FIG. 5Billustrates the substrate SUB′ and the inorganic layer IL onto which thelaser is radiated. A part of the inorganic layer IL is removed by theradiating laser onto the inorganic layer IL. In this manner, a taperedsidewall is formed in the inorganic layer IL. The tapered sidewall has acurved surface CS.

Conventionally, patterning via a photolithography process, a photoresistcoating process, a process of selective exposure using a mask, and adevelopment process have been utilized. To reduce manufacturing cost andtime, one or more exemplary embodiments reduce the number ofphotolithography processes to manufacture the flexible display device.That is, when patterning is performed via the photolithography processto prevent (or at least reduce) the material arranged in the bent regionfrom being transformed and damaged due to the bending of the flexibledisplay device, manufacturing cost and time may increase. According toone or more exemplary embodiments, a laser is selectively radiated topattern a material arranged in the bent region to prevent (or at leastreduce) the material arranged in the bent region from being transformedand damaged due to the bending of the flexible display device. In thismanner, the photolithography process may be omitted, and, as such,reductions in manufacturing cost and time may be achieved.

FIGS. 6A, 6B, 6C, 6D, 6E, 6F, 6G, 6H, 6I, 6J, and 6K are cross-sectionalviews of a flexible display device at various stages of manufacture,according to one or more exemplary embodiments. For convenience, aprocess of manufacturing a flexible display device will be described inassociation with the flexible display device of FIGS. 3A and 4. Also,for descriptive and illustrative convenience, various intermediatefeatures will be described and referenced as corresponding to thefeature eventually formed in the flexible display device.

In FIG. 6A, the barrier layer BR is formed on the substrate SUB. Thebarrier layer BR may be formed overlapping the first non-bent region FA1and the bent region BA. It is also contemplated that the barrier layerBR may be formed overlapping the second non-bent region FA2. The barrierlayer BR may be formed by a chemical vapor deposition (CVD) method, forexample, a plasma enhanced CVD (PECVD) method.

In FIG. 6B, the active pattern ACT is formed on the barrier layer BR.The active pattern ACT may be formed overlapping the first non-bentregion FA1.

In FIG. 6C, the gate insulating layer GI is formed on the active patternACT and exposed portions of the barrier layer BR. The gate insulatinglayer GI may be formed on the first non-bent region FA1 and the bentregion BA. It is also contemplated that the barrier layer BR may beformed overlapping the second non-bent region FA2. The gate insulatinglayer GI may be formed by the CVD method like the barrier layer BR.

In FIG. 6D, the gate electrode GE and the first capacitor electrode CE1are formed on the gate insulating layer GI. The gate electrode GE andthe first capacitor electrode CE1 may be formed overlapping the firstnon-bent region FA1. The gate electrode GE may be formed to correspondto (e.g., overlapping) the channel region of the active pattern ACT. Thegate electrode GE and the first capacitor electrode CE1 may be formed bya physical vapor deposition (PVD) method.

In FIG. 6E, the first interlayer insulating layer ILD1 is formed on thegate electrode GE, the first capacitor electrode CE1, and exposedportions of the gate insulating layer GI. The first interlayerinsulating layer ILD1 may be formed overlapping the first non-bentregion FA1 and the bent region BA. It is also contemplated that thefirst interlayer insulating layer ILD1 may be formed overlapping thesecond non-bent region FA2. The first interlayer insulating layer ILD1may be formed via the CVD method like the barrier layer BR.

In FIG. 6F, the second capacitor electrode CE2 is formed on the firstinterlayer insulating layer ILD1. The second capacitor electrode CE2 maybe formed overlapping the first capacitor electrode CE1, and, thereby,formed overlapping the first non-bent region FA1.

In FIG. 6G, the second interlayer insulating layer ILD2 is formed on thesecond capacitor electrode CE2 and exposed portions of the firstinterlayer insulating layer ILD1. The second interlayer insulating layerILD2 may be formed overlapping the first non-bent region FA1 and thebent region BA. It is also contemplated that the second interlayerinsulating layer ILD2 may be formed overlapping the second non-bentregion FA2.

In FIG. 6H, a first contact hole CNT1 and a second contact hole CNT2that pass through the gate insulating layer GI, the first interlayerinsulating layer ILD1, and the second interlayer insulating layer ILD2are formed. The first contact hole CNT1 and the second contact hole CNT2may be formed via a dry etching method. Respective portions of theactive pattern ACT are exposed by the first contact hole CNT1 and thesecond contact hole CNT2.

In FIG. 6I, portions of the barrier layer BR, the gate insulating layerGI, the first interlayer insulating layer ILD1, and the secondinterlayer insulating layer ILD2 are removed by radiating a laser ontothe portions of the barrier layer BR, the gate insulating layer GI, thefirst interlayer insulating layer ILD1, and the second interlayerinsulating layer ILD2 that are arranged in the bent region BA. Due tothe radiation of laser, as illustrated in FIGS. 3A and 6I, the barrierlayer BR, the gate insulating layer GI, the first interlayer insulatinglayer ILD1, and the second interlayer insulating layer ILD2 an openingis formed. The opening has tapered sidewalls provided with the curvedsurfaces CS1 through CS12.

In FIG. 6J, the source electrode SE, the drain electrode DE, and theconductive layer CL are formed on the second interlayer insulating layerILD2. The source electrode SE, the drain electrode DE, and theconductive layer CL may be formed by the PVD method like the gateelectrode GE and the first capacitor electrode CE1.

In FIG. 6K, the passivation layer PSL is formed on the source electrodeSE, the drain electrode DE, and at least some exposed portions of thesecond interlayer insulating layer ILD2. For instance, the passivationlayer PSL may not be formed overlapping the second non-bent region FA2and the bent region BA. The passivation layer PSL may also not be formedon exposed portions of the second interlayer insulating layer ILD2disposed in relatively close proximity to the bent region BA, e.g.,exposed regions of the second interlayer insulating layer ILD2 includingcurved surfaces C10 through C12.

FIGS. 7A and 7B are cross-sectional views of a flexible display deviceat various stages of manufacture, according to one or more exemplaryembodiments. For convenience, a process of manufacturing a flexibledisplay device will be described in association with FIGS. 7A and 7B, aswell as with reference to the flexible display device of FIG. 3B.Further, various intermediate features will be described and referencedas corresponding to the feature eventually formed in the flexibledisplay device. It is also noted that the process described withreference to FIGS. 7A and 7B is similar to the process described withreference to FIGS. 6A through 6K. As such, primarily differences fromthe process described with reference to FIGS. 6A through 6K will beprovided to avoid obscuring exemplary embodiments.

In FIG. 7A, unlike in FIG. 6H, while the first contact hole CNT1 and thesecond contact hole CNT2 are being formed, respective portions of thegate insulating layer GI′, the first interlayer insulating layer ILD1′,and the second interlayer insulating layer ILD2′ arranged in the bentregion BA are also patterned via etching. In this manner, the barrierlayer BR is exposed via the etching process. When the gate insulatinglayer GI′, the first interlayer insulating layer ILD1′, and the secondinterlayer insulating layer ILD2′ are etched, a halftone mask or a slitmask may be used. Use of the halftone mask or the slit mask may cause,at least in part, sidewalls of the gate insulating layer GI′, the firstinterlayer insulating layer ILD1′, and the second interlayer insulatinglayer ILD2′ to be tapered.

In FIG. 7B, unlike in FIG. 6I, a portion of the barrier layer BR isremoved by radiating a laser onto the portion of the barrier layer BRthat is arranged in the bent region BA. The radiation of the lasercauses, at least in part, a sidewall of the barrier layer BR to betapered, and, thereby, provided with the curved surfaces CS1 throughCS3. However, the gate insulating layer GI′, the first interlayerinsulating layer ILD1′, and the second interlayer insulating layer ILD2′may have tapered sidewalls without curved surfaces.

After FIG. 7B, like in FIG. 6J, a conductive layer, such as conductivelayer CL′ of FIG. 3B, is formed on the barrier layer BR, the gateinsulating layer GI′, the first interlayer insulating layer ILD1′, andthe second interlayer insulating layer ILD2′.

FIGS. 8A, 8B, and 8C are cross-sectional views of a flexible displaydevice at various stages of manufacture, according to one or moreexemplary embodiments. For convenience, a process of manufacturing aflexible display device will be described in association with FIGS. 8Athrough 8C, as well as with reference to the flexible display device ofFIG. 3C. Various intermediate features will be described and referencedas corresponding to the feature eventually formed in the flexibledisplay device. It is also noted that the process described withreference to FIGS. 8A through 8C is similar to the processes describedwith reference to FIGS. 6A through 6K and FIGS. 7A and 7B. As such,primarily differences from the processes described with reference toFIGS. 6A through 6K and FIGS. 7A and 7B will be provided to avoidobscuring exemplary embodiments.

In FIG. 8A, unlike in FIG. 6H, while the first contact hole CNT1 and thesecond contact hole CNT2 are being formed, the gate insulating layerGI″, the first interlayer insulating layer ILD1″, and the secondinterlayer insulating layer ILD2″ arranged in the bent region BA arealso patterned via etching. In this manner, the barrier layer BR′ isexposed by the etching process. In addition, in FIG. 8A, unlike in FIG.7A, since a halftone mask or a slit mask is not used when the gateinsulating layer GI″, the first interlayer insulating layer ILD1″, andthe second interlayer insulating layer ILD2″ are being etched, the gateinsulating layer GI″, the first interlayer insulating layer ILD1″, andthe second interlayer insulating layer ILD2″ do not have taperedsidewalls.

In FIG. 8B, a laser is radiated onto a part of the barrier layer BR′that is arranged in the bent region BA. Unlike in FIGS. 6I and 7B, thebarrier layer BR′ is not provided with a plurality of curved surfaces.

In FIG. 8C, in the bent region BA, the organic layer OL is formed on apart in which at least one of the substrate SUB and the barrier layerBR′ is exposed. The organic layer OL may be formed by selectivelycoating an organic materials with a dispenser without a photolithographyprocess. After FIG. 8C, like in FIG. 6J, the conductive layer CL″ may beformed on the organic layer OL and exposed portions of the secondinterlayer insulating layer ILD2″. Referring back to FIG. 3C, since theconductive layer CL″ is formed on the tapered exposed portion of theorganic layer OL, although the barrier layer BR′ is not provided withthe plurality of curved surfaces and the bent region BA is bent, theconductive layer CL″ is not cut off. Further, given the increasedsurface area of the exposed portion of the organic layer OL, a potentialfor the conductive layer CL″ from lifting off of the organic layer OLmay be reduced.

FIGS. 9A, 9B, and 9C are cross-sectional views of a flexible displaydevice at various stages of manufacture, according to one or moreexemplary embodiments. For convenience, a process of manufacturing aflexible display device will be described in association with FIGS. 9Athrough 9C, as well as with reference to the flexible display device ofFIG. 3D. Various intermediate features will be described and referencedas corresponding to the feature eventually formed in the flexibledisplay device. Also, the process described with reference to FIGS. 9Athrough 9C is similar to the processes described with reference to FIGS.6A through 6K, FIGS. 7A and 7B, and FIGS. 8A through 8C. As such,primarily differences from the processes described with reference toFIGS. 6A through 6K, FIGS. 7A and 7B, and FIGS. 8A through 8C will beprovided to avoid obscuring exemplary embodiments.

In FIG. 9A, like in FIG. 7A, while the first contact hole CNT1 and thesecond contact hole CNT2 are being formed, the gate insulating layerGI′, the first interlayer insulating layer ILD1′, and the secondinterlayer insulating layer ILD2′ arranged in the bent region BA arealso patterned via etching. In this manner, the barrier layer BR″ isexposed by the etching process. As previously mentioned in associationwith the gate insulating layer GI′, the first interlayer insulatinglayer ILD1′, and the second interlayer insulating layer ILD2′ in FIG.7A, the gate insulating layer GI′, the first interlayer insulating layerILD1′, and the second interlayer insulating layer ILD2′ in FIG. 9A areetched using the slit mask or the halftone mask.

In FIG. 9B, a laser is radiated onto the barrier layer BR″. Unlike inFIG. 6K, due to the radiation of the laser, the barrier layer BR″ inFIG. 9B is formed including the island ISL. The island ISL does notcontact other portions of the barrier layer BR″ excluding the islandISL. Also, the island ISL may include tapered sidewalls.

In FIG. 9C, the organic layer OL′ is formed on the barrier layer BR″,the gate insulating layer GI′, the first interlayer insulating layerILD1′, and the second interlayer insulating layer ILD2′. The organiclayer OL′ may be formed by selectively coating an organic material via adispenser without a photolithography process. The organic layer OL′ mayhave the concavo-convex part PD. The shape of the organic layer OL′ maycorrespond to that of the concavo-convex part PD. After FIG. 9C, like inFIG. 6J, the conductive layer CL′″ may be formed on the organic layerOL′ and the second interlayer insulating layer ILD2′.

Although certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. Accordingly, the inventive concepts are notlimited to such embodiments, but rather to the broader scope of thepresented claims and various obvious modifications and equivalentarrangements.

What is claimed is:
 1. A method of manufacturing a flexible displaydevice, the method comprising: forming a first insulating layer on asurface of a substrate, the substrate comprising a bending region and anon-bending region; removing, via laser radiation, a portion of thefirst insulating layer overlapping the bending region; forming aconductive layer on the first insulating layer; and forming a lightemitting layer overlapping the non-bending region.
 2. The method ofclaim 1, wherein: removing the portion of the first insulating layercomprises radiating a laser a plurality of number of times to form asidewall in the first insulating layer; and the sidewall in the firstinsulating layer comprises a tapered surface, the tapered surfacecomprising at least three curved surfaces continuously arranged with oneanother.
 3. The method of claim 1, further comprising: forming, afterforming the first insulating layer on the surface of the substrate, asecond insulating layer on the first insulating layer; and forming athird insulating layer on the second insulating layer.
 4. The method ofclaim 3, wherein: removing the portion of the first insulating layercomprises radiating a laser a plurality of times to form a sidewall inthe second insulating layer and a sidewall in the third insulatinglayer; and at least one of the sidewall of the second insulating layerand the sidewall of the third insulating layer comprises a taperedsurface, the tapered surface comprising at least three curved surfacescontinuously arranged with one another.
 5. The method of claim 3,further comprising: forming, overlapping the non-bending region, anactive pattern on the first insulating layer after forming the firstinsulating layer; forming, overlapping the non-bending region, a gateelectrode on the second insulating layer after forming the secondinsulating layer; and etching, after forming the third insulating layer,the second insulating layer and the third insulating layer to exposerespective portions of the active pattern, wherein, in forming theconductive layer, a source electrode and a drain electrode are formed onthe respectively exposed portions of the active pattern.
 6. The methodof claim 5, wherein, in exposing the respective portions of the activepattern, the second insulating layer and the third insulating layer areetched, forming an opening exposing at least a portion of the firstinsulating layer overlapping the bending region.
 7. The method of claim6, further comprising: forming, after removing the portion of the firstinsulating layer, an organic layer at least partially filling theopening.
 8. The method of claim 7, wherein the organic layer is formedby selectively coating an organic material via a dispenser.
 9. Themethod of claim 5, wherein the second insulating layer and the thirdinsulating layer are etched using a halftone mask or a slit mask. 10.The method of claim 9, wherein: removing the portion of the firstinsulating layer via the laser radiation forms an island in the firstinsulating layer; and the island is spaced apart from a remainder of thefirst insulating layer.
 11. The method of claim 10, further comprising:forming, after removing the portion of the first insulating layer viathe laser radiation, an organic layer at least partially filling anopening exposing at least one of the substrate and the first insulatinglayer in a region overlapping the bending region, wherein a surface ofthe organic layer protrudes away from the substrate, the surfacecomprising a concavo-convex shape corresponding to a shape of theisland.
 12. The method of claim 11, wherein the organic layer is formedby selectively coating an organic material via a dispenser.
 13. Themethod of claim 5, further comprising: forming, after forming the thirdinsulating layer on the gate electrode, a second capacitor electrode onthe third insulating layer; and forming, after forming the secondcapacitor electrode, a fourth insulating layer on the second capacitorelectrode, wherein, in forming the gate electrode on the secondinsulating layer, a first capacitor electrode disposed at a same layeras the gate electrode is formed.
 14. The method of claim 13, wherein:wherein, in removing the portion of the first insulating layer, thelaser radiation is radiated a plurality of times onto a portion of thefourth insulating layer overlapping the bending region; and wherein thelaser radiation forms a sidewall in the fourth insulating layer, thesidewall comprising a tapered surface with at least three curvedsurfaces continuously arranged with one another.